300MHz to 450MHz High-Efficiency,
Crystal-Based +13dBm ASK Transmitter
ABSOLUTE MAXIMUM RATINGS
V DD to GND ..........................................................-0.3V to +4.0V
All Other Pins to GND ................................-0.3V to (V DD + 0.3V)
Continuous Power Dissipation (T A = +70°C)
8-Pin SOT23 (derate 8.9mW/°C above +70°C)............714mW
Storage Temperature Range .............................-60°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Operating Temperature Range .........................-40°C to +125°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, all RF inputs and outputs are referenced to 50 Ω , V DD = +2.1V to +3.6V, T A = -40°C to +125°C, unless
otherwise noted. Typical values are at V DD = +2.7V, T A = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SYSTEM PERFORMANCE
Supply Voltage
V DD
f RF = 315MHz
V DATA at 50% duty
cycle, (Notes 3, 4)
PA on (Note 5)
2.1
7.7
13.8
3.6
14.1
25.4
V
Supply Current
(Note 2)
I DD
f RF = 433MHz
PA off (Note 6)
V DATA at 50% duty
cycle, (Notes 3, 4)
PA on (Note 5)
1.7
8.0
14.0
2.8
14.4
25.7
mA
PA off (Note 6)
1.9
3.1
V DATA < V IL for
T A < +25°C
40
130
Standby Current
Frequency Range (Note 4)
I STDBY
f RF
more than WAIT
time (Notes 4, 7)
T A < +125°C
300
550
2900
450
nA
MHz
Data Rate (Note 4)
Modulation Depth (Note 8)
ON to OFF P OUT ratio
0
90
100
kbps
dB
T A = +25 ° C, V DD =
+2.7V
9.6
12.5
15.4
Output Power, PA On
(Notes 4, 5)
P OUT
f RF = 300MHz to
450MHz
T A = +125 ° C, V DD =
+2.1V
5.9
9.0
12.0
dBm
T A = -40 ° C, V DD =
+3.6V
13.1
15.8
18.5
Turn-On Time
Transmit Efficiency with CW
(Notes 5, 9)
Transmit Efficiency with 50%
OOK (Notes 3, 9)
t ON
Oscillator settled to within 50kHz
Oscillator settled to within 5kHz
f RF = 315MHz
f RF = 433MHz
f RF = 315MHz
f RF = 433MHz
220
450
48
47
43
41
μs
%
%
2
_______________________________________________________________________________________
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